فوتونات مفردة على السيليكون سريع

الملخص الأصلي

كما كتبه المؤلفون، بالإنجليزية arXiv:2604.23422

Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction, elevated-temperature operation, monolithic silicon integration, and telecom-wavelength compatibility remains a major challenge. Here, we demonstrate electrically contacted circular Bragg grating (eCBG) resonators incorporating InGaAs QDs directly grown on silicon, enabling bright single-photon emission in the telecom O-band. Deterministic electron-beam lithography and a ridge-based vertical p--i--n diode architecture enable precise device integration and electrical control of individual emitters. The QD--eCBGs exhibit a quantum-confined Stark shift of approximately 16 nm (11 meV) at 4 K, representing a record for QDs embedded in nanophotonic structures at telecom wavelengths. This is achieved alongside a photon extraction efficiency of $$(21.7 \pm 3.0)\%$$ into the first lens, while maintaining excellent radiative properties and high single-photon purity, with $$g^{(2)}(0)=0.0078 \pm 0.0012$$ below saturation and $$g^{(2)}(0)=0.0183 \pm 0.0021$$ at saturation under pulsed excitation. Robust antibunching persists up to 77 K, with $$g^{(2)}(0)=0.0663 \pm 0.0056$$, enabling operation with liquid-nitrogen or compact Stirling cryocoolers. Furthermore, spatially separated QD--eCBGs can be electrically tuned into spectral resonance without degrading photon statistics. These results establish a silicon-compatible, electrically addressable telecom O-band quantum light platform combining wide spectral tunability, high single-photon purity, and elevated-temperature operation, providing a scalable route toward practical photonic quantum networks.