Liquid metal prints fast transistors express

Original: "High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air"
arXiv:2604.06656 · 2026-04-08 · CC BY-SA 4.0 · 1 min
A thin film of indium oxide, printed in the open air, conducts electricity almost as well as the best vacuum-deposited samples.

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An ordinary transistor in a phone is made in a vacuum chamber, where atoms are deposited layer by layer. Expensive and slow. But indium oxide can be printed like ink — from a drop of liquid metal that, in air, coats itself with a thin oxide film.

The authors took indium, melted it, and rolled it over a substrate at 250 degrees. The result was a polycrystalline layer only 5 nanometers thick — a thousand times thinner than a human hair. Its grains are large and span the entire thickness, so electrons move almost without obstacles.

A mobility of 125 cm²/V·s is like a sprinter's speed: an electron in such a channel outruns its counterparts in most printed semiconductors.

The transistor built on this film works stably: after 10,000 on-off cycles, its characteristics did not degrade. And if you add a hafnium oxide insulator, the mobility stays high—107 cm²/V·s — while leakage current is minuscule. From such transistors, the team built an inverter, a basic logic element, and it amplifies the signal by a factor of 69.8.

Printing oxide semiconductors from liquid metal is like cooking on a skillet instead of molecular gastronomy: simpler, faster, and almost as tasty. The next step is to shrink the transistors and test them in real circuits.

An indium oxide film just 5 nanometers thick is transparent to the eye but conducts electricity — which is why such materials are used in touchscreens.

In the series 'Westworld,' robots are covered with thin films that are printed on the spot — similar to this technology, but for electronics.

\mu_{CON} = \frac{L}{R_{ch} \cdot C_{ox} \cdot W}
Charge mobility (mu) is the ratio of channel length L to the product of channel resistance R_ch, insulator capacitance C_ox, and channel width W. The higher the mu, the faster the transistor.
Scientists
Paul DiracEmmy NoetherWolfgang PauliEnrico FermiChien-Shiung WuEugene Wigner
Concepts
high temperature superconductor liquid nitrogen silicon carbide high temperature superconductivity liquid helium gallium arsenide metal insulator transition solid electrolyte titanium oxide silicon wafer thin film superconductivity superconducting wire semiconductor aluminum nitride thin film topological insulators ion channel lithium ion molybdenum disulfide insulator niobium nitride