
A semiconductor compound used for high-speed electronic and photonic applications.Gallium arsenide (GaAs) is a compound semiconductor formed by equal parts gallium and arsenic. Unlike silicon, which dominates the electronics industry, GaAs offers far higher electron mobility, meaning electrons can move through it faster. This makes it the material of choice for high-speed electronics, such as the transistors in mobile phone amplifiers and satellite communications, and for photonic devices like laser diodes and light-emitting diodes (LEDs).
Gallium arsenide was first synthesized and studied in the 1950s, with early work at institutions like Bell Labs and RCA. Its potential for high-frequency and optoelectronic applications was recognized quickly, and by the 1960s, GaAs laser diodes were demonstrated.
In GaAs, the crystal lattice is a zinc-blende structure, where each gallium atom bonds with four arsenic atoms. The key advantage is its direct band gap: when an electron drops from the conduction band to the valence band, it can emit a photon directly. In silicon, this transition is indirect, requiring a phonon (lattice vibration) to conserve momentum, making light emission highly inefficient. GaAs's direct gap allows efficient conversion of electrical current into light, and vice versa, enabling lasers and photodetectors.
GaAs is used in high-frequency radar systems, smartphone power amplifiers, laser pointers, and the infrared LEDs in optical mice and remote controls. It also underpins the photodetectors in fiber-optic communication networks.
GaAs solar cells are so efficient that they are used on nearly all spacecraft, including the Mars rovers, despite being more expensive than silicon cells.
























