Multilayer Bridges for Superconducting Electronics express

Original: "Gap Engineered Superconducting Multilayer Nanobridge Josephson Junctions"
arXiv:2603.20757 · 2026-03-21 · CC BY 4.0 · 1 min
New three-dimensional niobium and nitride junctions work without oxide barriers or focused ion beams.

Superconducting circuits often rely on Josephson junctions — places where current flows without resistance through a thin barrier. Typically, this barrier is an oxide layer, but its properties are hard to control at the nanoscale. In this new work, the barrier is a thin layer of niobium or titanium nitride sandwiched between niobium layers.

A Josephson junction is like a narrow bridge between two superconducting shores: electrons cross it in pairs without losing energy.

The researchers fabricated three-dimensional nanobridges using electron-beam lithography and chlorine etching. The top niobium layer provides a high superconducting transition temperature, while the thin nitride layer (NbN or TiN) forms the weak link. This approach allows tuning the superconducting gap and proximity effect without using focused ion beams or oxide barriers.

The devices were integrated into SQUIDs, ultrasensitive magnetic field sensors, and their operation was confirmed at the circuit level. This paves the way for scalable production of oxide-free Josephson junctions for superconducting electronics.

A SQUID is a ring with two Josephson junctions that can detect magnetic fields a billion times weaker than Earth's.

Niobium becomes superconducting at about 9.2 K — higher than liquid helium's temperature, so it can be cooled relatively cheaply.

Scientists
Wolfgang PauliLeo EsakiFelix BlochSatyendra Nath BoseAlbert EinsteinJohn Bardeen
Concepts
josephson current Josephson effect niobium nitride aluminum oxide transmon qubit superconducting wire tunnel junction carbon nanotube aluminum nitride graphene superconductivity niobium high temperature superconductivity superconducting electronics twisted bilayer graphene proximity effect nanodevice nanophotonic device silicon substrate interlayer coupling silicon carbide