A dielectric material used as the insulating barrier in Josephson junctions.Aluminum oxide (Al₂O₃) is a wide-bandgap dielectric material that, in its amorphous form, serves as the insulating barrier in Josephson junctions—the core building block of superconducting qubits. In these junctions, two superconducting electrodes are separated by a thin (~1–2 nm) layer of aluminum oxide, through which Cooper pairs tunnel quantum mechanically. The properties of this oxide layer—its thickness, uniformity, and atomic structure—directly determine the qubit's energy levels, coherence times, and noise characteristics. The provided titles highlight its role: the thickness of aluminum is linked to qubit noise, and the internal structure of the junction contact is probed to understand what limits performance.
The use of aluminum oxide as a tunnel barrier in Josephson junctions dates back to the 1960s, following Josephson's prediction (1962) and the first fabrication of superconducting tunnel junctions. The material was adopted because aluminum forms a stable, self-limiting native oxide that is easy to grow and provides a uniform barrier. The systematic study of its role in qubit decoherence began in the 2000s with the rise of superconducting quantum computing.
Aluminum oxide is formed by oxidizing a thin aluminum film, typically by exposing it to oxygen or via plasma oxidation. The resulting amorphous Al₂O₃ is a good insulator with a high dielectric constant (~9) and a large bandgap (~8.8 eV), preventing leakage of electrons while allowing quantum tunneling of Cooper pairs. The thickness is controlled to a few nanometers; too thick and tunneling is suppressed, too thin and pinholes cause shorts. The atomic structure is disordered, and the dangling bonds or trapped charges create TLS defects that couple to the qubit, causing energy loss and dephasing. Researchers use techniques like transmission electron microscopy and noise spectroscopy to characterize these defects.
Aluminum oxide is used in every superconducting qubit (transmon, fluxonium, etc.) as the Josephson junction barrier, and also in solar cells as a surface passivation layer, in memristors, and as a protective coating in microelectronics.
The thickness of the aluminum oxide barrier in a Josephson junction is only about 1–2 nanometers—roughly 5–10 atoms across—yet it must be uniform to within a single atomic layer for the qubit to work reliably.
























