In a two-dimensional electron layer, in the cold and a strong magnetic field, the conductivity freezes on rigid steps, as if electricity can only flow in portions — and these portions are dictated by topology.
In practice: The quantum Hall effect provided a standard of electrical resistance with an accuracy of up to 10⁻¹⁰, used for verifying resistors worldwide.
Discovered by Klaus von Klitzing in 1980, the integer quantum Hall effect showed that the Hall resistance of a two-dimensional electron gas in a perpendicular magnetic field is quantized: R_H = h/(ν e²), where ν = 1,2,3,... This is a universal phenomenon, independent of the sample material. In 1982, in cleaner samples, the fractional quantum Hall effect was discovered, where ν is a rational number with an odd denominator, explained by the formation of composite fermions — quasiparticles combining electrons with an even number of magnetic flux vortices.
How it works
In practice, it is used for ultra-precise determination of fundamental constants and as a resistive standard. The effect itself is a window into topological phases of matter.
💡 The quantization accuracy is so high that the von Klitzing constant R_K = 25812.80745... Ω is used to establish a new definition of the kilogram via the Planck constant.
The effect occurs in a very thin conducting layer (for example, in a transistor structure) at low temperatures and a strong magnetic field. If you pass a current along the sample and measure the transverse (Hall) voltage, then as the magnetic field increases, the Hall resistance will not just smoothly change, but will form flat plateaus at values R_K/ν, where ν is an integer. It is as if a car can only travel at certain speeds, jumping between them, and intermediate ones are forbidden. The longitudinal resistance then becomes zero.
How it works
In practice, it is used for ultra-precise determination of fundamental constants and as a resistive standard. The effect itself is a window into topological phases of matter.
💡 The Hall resistance on the plateau is not just constant to within billionths — it does not depend on the shape of the sample, its impurities, or even the number of electrons, which is a direct consequence of topological protection.
The quantum Hall effect (QHE) is a macroscopic quantum phenomenon observed in two-dimensional electron systems at low temperatures and strong magnetic fields. The integer QHE is characterized by the quantization of the Hall conductivity σ_xy = ν e²/h with an integer filling factor ν of Landau levels, which is related to the topological invariant TKNN (Thouless–Kohmoto–Nightingale–den Nijs). The fractional QHE arises from strong electron-electron interactions, forming an incompressible liquid with fractional charges of excitations obeying anyonic statistics.
Discovery
In 1879, Edwin Hall discovered the effect of a transverse potential difference in a current-carrying conductor in a magnetic field. 100 years later, in 1980, Klaus von Klitzing, working with silicon MOSFETs, discovered plateaus in the Hall resistance as the field changed, for which he received the Nobel Prize in 1985. In 1982, Daniel Tsui, Horst Störmer, and Robert Laughlin discovered the fractional quantum Hall effect, and Laughlin proposed a wave function for the ground state at ν = 1/3 (Nobel Prize in 1998). The theoretical interpretation through non-abelian quantum states opened the way to topological quantum computing.
How it works
QHE is used in metrology as a primary standard of resistance based on the von Klitzing constant R_K = h/e² ≈ 25.812807459... kΩ. Majorana excitations in the fractional filling regime ν = 5/2 are also being investigated for stable qubits. Limits of applicability: requires millikelvin temperatures, high-mobility heterostructures (often GaAs/AlGaAs), and fields of several tesla.
Caveats
The mechanism of the fractional QHE at even denominators is not fully understood, in particular at ν = 5/2, where non-abelian statistics is assumed.; The creation of topological quantum computers based on QHE requires control over anyons and accurate readout of their state.; The transition from two-dimensional systems to three-dimensional analogues (quantum Hall effect in topological insulators) is actively researched.
\sigma_{xy} = \nu \frac{e^2}{h}
σ_xy — Hall conductivity (inverse Hall resistance, in Ω⁻¹), ν — Landau level filling factor (dimensionless number, ν = N_e / N_Φ, where N_e is the number of electrons, N_Φ is the number of magnetic flux quanta), e — elementary charge (e ≈ 1.602×10⁻¹⁹ C), h — Planck constant (h ≈ 6.62607015×10⁻³⁴ J·s). Hence the Hall resistance R_H = h/(ν e²) = R_K/ν, where R_K is the von Klitzing constant, R_K ≈ 25812.80745 Ω.
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