
The change in a material's electrical resistance in response to an applied magnetic field.Magnetoresistance is the change in a material's electrical resistance when an external magnetic field is applied. In ordinary metals, this effect is small and positive (resistance increases slightly), but in certain materials and structures, it can be dramatic — resistance can drop by orders of magnitude or even vanish. This phenomenon is not just a laboratory curiosity; it is the physical basis for modern magnetic sensors, hard disk read heads, and magnetic random-access memory (MRAM).
The effect was discovered by William Thomson (Lord Kelvin) in 1856, who observed that the resistance of iron and nickel changed when magnetized. The modern understanding and technological exploitation, especially giant magnetoresistance, emerged in the late 1980s with the work of Albert Fert and Peter Grünberg, who shared the 2007 Nobel Prize in Physics.
The effect arises because a magnetic field influences the paths of conduction electrons. In a simple picture, electrons moving through a material are scattered by atoms and impurities; a magnetic field curves their trajectories, increasing the chance of collisions and thus resistance (ordinary magnetoresistance). In more exotic cases, such as giant magnetoresistance (GMR) in layered magnetic/non-magnetic structures, the resistance depends on the relative alignment of magnetic layers: when aligned, electrons with matching spin pass through easily; when anti-aligned, they scatter more strongly. The effect can also reveal hidden magnetic order, as in the studies of magnetic ordering in crystals and superconductors mentioned in the titles.
Used in read heads of hard disk drives, magnetic field sensors in automotive and industrial applications, and in non-volatile magnetic random-access memory (MRAM).
The 2007 Nobel Prize in Physics was awarded for the discovery of giant magnetoresistance, which enabled a thousandfold increase in hard disk storage density.















