
A layered compound of tungsten and selenium, studied here for its unusual electronic structure.Tungsten diselenide is a layered compound of tungsten and selenium, belonging to the family of transition metal dichalcogenides. It has a unique electronic structure that changes dramatically when thinned to a single layer, transitioning from an indirect to a direct bandgap semiconductor. This property makes it highly interesting for optoelectronics and valleytronics, where the electron's momentum and spin can be used to carry information.
Tungsten diselenide was first synthesized in the 1960s, but its monolayer properties were only explored after the discovery of graphene in 2004. The direct bandgap in monolayers was demonstrated in 2010.
In its bulk form, tungsten diselenide has an indirect bandgap, meaning electrons need to change momentum to emit light. When exfoliated to a monolayer, the bandgap becomes direct, allowing efficient light emission and absorption. The material also exhibits strong spin-orbit coupling, which couples the electron's spin to its momentum, creating unique 'valley' states that can be selectively excited with circularly polarized light. This allows for control of electronic properties via optical means.
Used in ultra-thin photodetectors, light-emitting diodes, and valleytronic devices, as well as in studies of exciton physics and quantum optics.
In monolayer tungsten diselenide, shining circularly polarized light can create a 'valley polarization' where electrons in different valleys have opposite spins, a property that could be used for future 'valleytronic' computers.

















